Samsung's 2 Nm Taylor Fab 2 Reportedly Booked, Mostly by AMD

Samsung’s planned Taylor Fab 2 in Texas is reportedly fully booked, with AMD expected to account for most of the capacity. The facility is intended to manufacture 2 nm logic base dies for high-bandwidth memory (HBM), the processing chips at the bottom of stacked memory packages - not AMD CPUs or GPUs. Samsung would combine the Texas-made dies with DRAM produced in South Korea and deliver finished HBM. AMD’s orders alone are said to be large enough to fill the fab’s planned output, while Samsung has declined to confirm customer details.

The arrangement fits a broader effort to secure HBM supply for AMD’s AI accelerators. Samsung reportedly sought foundry business from AMD in exchange for providing memory, following company head Lisa Su’s October visit; a March agreement had already named Samsung the primary HBM4 supplier for AMD’s Instinct MI455X. Current HBM4 and sampled HBM4E use 4 nm base dies, so the 2 nm production appears intended for later generations. The project remains years away: construction was expected to begin in November, equipment installation is planned from February 2029, and mass production is targeted for 2030. NVIDIA’s participation is less certain, as it has reportedly asked memory suppliers to use TSMC for its NVHBM base dies.