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China's CAS institute charts DUV route to 3nm GAA without EUV

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Screenshot of China's CAS institute charts DUV route to 3nm GAA without EUV

China's CAS institute reports it has mapped a deep-ultraviolet (DUV) lithography route to produce 3 nm gate-all-around (GAA) devices without using extreme-ultraviolet (EUV) tools, framing the work as a significant milestone in Chinese advanced semiconductor development. The announcement highlights involvement from Tianchun Ye, chief technical engineer for China’s National Science and Technology Major Project (02 Special), and positions the DUV-based pathway as an alternative manufacturing strategy that could reach leading-node performance without access to EUV equipment.

The claim centers on achieving 3 nm GAA capabilities while bypassing EUV, which, if technically validated, would reduce reliance on scarce EUV lithography tools and alter supply-chain and policy dynamics around high-end chipmaking. Specific methods, process data, and validation results are behind a paywall in the published report, so technical particulars and independent verification are not available here. The core takeaway is a declared DUV strategy aimed at near-leading-node GAA production and the potential strategic implications for semiconductor autonomy and equipment sourcing.

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